Impurity doping and electrical properties of GaAsP heteroepitaxially grownon GaP and Si by metalorganic molecular beam epitaxy

Citation
K. Nakamura et al., Impurity doping and electrical properties of GaAsP heteroepitaxially grownon GaP and Si by metalorganic molecular beam epitaxy, JPN J A P 1, 40(4A), 2001, pp. 2132-2137
Citations number
16
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
4A
Year of publication
2001
Pages
2132 - 2137
Database
ISI
SICI code
0021-4922(200104)40:4A<2132:IDAEPO>2.0.ZU;2-1
Abstract
Impurity doping and electrical properties of GaAsP layers have been studied . Samples used in this study were GaAsP heteroepitaxially grown on GaP and Si substrates by metalorganic molecular beam epitaxy (MOMBE), using triethy lgallium (TEGa), tertiarybutylarsine (TBAs) and phosphine (PH3) as source g ases. Diethylzinc (DEZn) and tetraethyltin (TESn) were used as p- and n-typ e doping gases, respectively. Carrier concentrations of 5 x 10(19) cm(-3) f or Zn-doped GaAsP and 2 x 10(18) Cm-3 for Sn-doped GaAsP were achieved. A G aAsP p-n diode was fabricated on a Si substrate, and its current-voltage ch aracteristics were examined.