Sub-300 angstrom (Ba-x,Sr1-x)TiO3 films by metal organic chemical vapor deposition: Nanostructure, step coverage, and dielectric properties

Citation
Sk. Dey et al., Sub-300 angstrom (Ba-x,Sr1-x)TiO3 films by metal organic chemical vapor deposition: Nanostructure, step coverage, and dielectric properties, JPN J A P 1, 40(5A), 2001, pp. 3354-3358
Citations number
47
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
5A
Year of publication
2001
Pages
3354 - 3358
Database
ISI
SICI code
0021-4922(200105)40:5A<3354:SA(FBM>2.0.ZU;2-B
Abstract
This is a preliminary report on the nanostructure and its evolution, step-c overage, and dielectric properties of sub-300 Angstrom (Ba-x,Sr1-x)TiO3 fil ms. The (001)-oriented polycrystalline films were deposited at 50-70 Angstr om /min by metal-organic chemical vapor deposition (MOCVD) on (111) Pt-pass ivated Si substrates of 8-inch diameter. From the detailed nonstructural ch aracterization of (Ba-0.64,Sr-0.36)TiO3 films, the orientation, cation stoi chiometry, and an alternative but plausible mechanism of growth and the ori gin of roughness are forwarded. Additionally, the step-coverage in 2 : 1 to 5 : 1 aspect-ratio trenches, coupled with the frequency/voltage dependence of the dielectric properties of (Ba-x,Sr1-x)TiO3 films are reported. A 275 Angstrom (Ba-0.64,Sr-0.36)TiO3 film exhibited a dispersionless dielectric permittivity and loss tangent of 260 and 0.003, respectively, and the permi ttivity (epsilon (r) = 340) of a 300 Angstrom (Ba-0.5,Sr-0.5)TiO3 film redu ced by 53% at a dc-bias of 3V.