Thermoelectric properties of CeRu4P12 and CeOs4P12 with filled skutterudite-type structure

Citation
C. Sekine et al., Thermoelectric properties of CeRu4P12 and CeOs4P12 with filled skutterudite-type structure, JPN J A P 1, 40(5A), 2001, pp. 3326-3329
Citations number
32
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
5A
Year of publication
2001
Pages
3326 - 3329
Database
ISI
SICI code
0021-4922(200105)40:5A<3326:TPOCAC>2.0.ZU;2-O
Abstract
The thermoelectric properties of hybridized band-gap semiconductor CeRu4P12 and CeOs4P12 with the filled skutterudite-type structure have been studied . Skutterudites have been identified recently as promising candidates for t hermoelectric applications such as in solid-state refrigeration or power ge neration. Polycrystalline samples of CeRu4P12 and CeOs4P12 were synthesized with a high-pressure cell under high temperature using a cubic-anvil high- pressure apparatus. The samples were characterized by X-ray diffractometry. The Seebeck coefficient, electrical resistivity, Hall coefficient and ther mal conductivity were measured. The Seebeck coefficients of both compounds are significantly large and the power factor values are of the order of 10( -3) W/mK(2). The effect of hybridization between the Ce 4f and pnicogen p s tates or transition metal d states is important for determining the thermoe lectric properties of this system.