Fabrication of Schottky junction between Au and SrTiO3

Citation
A. Inoue et al., Fabrication of Schottky junction between Au and SrTiO3, JPN J A P 1, 40(5A), 2001, pp. 3153-3156
Citations number
13
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
5A
Year of publication
2001
Pages
3153 - 3156
Database
ISI
SICI code
0021-4922(200105)40:5A<3153:FOSJBA>2.0.ZU;2-H
Abstract
A Schottky junction with a high rectification ratio between Au and La-doped SrTiO3 has been fabricated using a simple surface treatment. Highly La-dop ed (5%) SrTiO3 single crystals are annealed in O-2 atmosphere at about 1000 degreesC for 1 h and etched in HNO3 for more than five min. The HNO3 etchi ng is performed in a globe box containing N-2 to prevent pollution from the air. After the treatment, Au is deposited on the SrTiO3 surface in a vacuu m (similar to 10(-7) Torr) with an e-gun evaporator. The current voltage ch aracteristics of the junction have shown excellent rectification properties , although junctions using neither annealed nor etched SrTiO3 exhibit high leak current in reverse voltage. The rectification ratio of the junction at I V is more than six orders of magnitude and there is no hysteresis in the current voltage spectra. The logarithm of the current is linear with the f orward bias voltage. The ideal factor of the junction is estimated to be ab out 1.68. These results suggest that, if prevented from being pollution by the air, a good Schottky junction can be obtained by easy processes such as annealing in oxygen atmosphere and surface etching with acid.