1.55 mu m wavelength strain-compensated InxGa1-xAs/InyAl1-yAs electroabsorption modulators with high extinction ratio and low polarization-dependent loss

Citation
Tw. Kim et al., 1.55 mu m wavelength strain-compensated InxGa1-xAs/InyAl1-yAs electroabsorption modulators with high extinction ratio and low polarization-dependent loss, JPN J A P 1, 40(5A), 2001, pp. 3120-3123
Citations number
28
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
5A
Year of publication
2001
Pages
3120 - 3123
Database
ISI
SICI code
0021-4922(200105)40:5A<3120:1MMWSI>2.0.ZU;2-C
Abstract
Photocurrent (PC) measurements were carried out to investigate the excitoni c transitions in InxGa1-xAs/InyAl1-yAs multiple quantum wells with and with out an applied electric field. Transmission electron microscopy showed that high-quality I I-period strain-compensated In0.64Ga0.36As/In0.47Al0.53As e lectroabsorption modulator structures with high-quality heterointerfaces we re grown by molecular beam epitaxy. The results for the PC data at 300 K fo r several applied electric fields showed that many excitonic transitions sh ifted to longer wavelengths as the applied electric field increased. The ca lculated value of the interband transitions from the first electronic state to the first heavy-hole state were in qualitative agreement with those obt ained from the PC measurements. The maximum extinction ratio at a wanelengt h of 1.55 mum under an applied voltage of -1.5 V was 14.3 dB, the polarizat ion-dependent loss at an extinction ratio of 14.3 dB was less than 0.5 dB, and the coupling losses were below 1.5 dB per facet at 1.55 mum. These resu lts indicate that the electroabsorption modulators fabricated utilizing sra in-compensated In0.64Ga0.36As/In0.47Al0.53As multiple quantum wells hold pr omise for high-efficiency devices in the 1.55-mum spectral range.