CO2-laser-assisted plasma-enhanced chemical vapor deposition of silicon dioxide thin film

Citation
Hs. Tsai et al., CO2-laser-assisted plasma-enhanced chemical vapor deposition of silicon dioxide thin film, JPN J A P 1, 40(5A), 2001, pp. 3093-3095
Citations number
15
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
5A
Year of publication
2001
Pages
3093 - 3095
Database
ISI
SICI code
0021-4922(200105)40:5A<3093:CPCVDO>2.0.ZU;2-G
Abstract
The plasma enhanced chemical vapor deposition (PECVD) of silicon dioxide (S iO2) thin films from SiH4 and N2O has been executed with and without CO2 la ser illumination. The quality of the film processed under a 10.6 mum CO2 la ser was close to that of a film grown when the substrate was heated to 200 degreesC. Since the temperature of the film substrate under CO2 laser illum ination was only about 55 degreesC, this method should be helpful in proces ses where a low thermal budget is required. CO2-laser-assisted PECVD (terme d LAPECVD) with a substrate heated to 200 degreesC resulted in a SiO2 thin film with excellent I-V characteristics and surface morphology, as well as a higher refractive index and lower etching rate in BOE solution. Applicati on of this thin film should be explored.