Characterization of Si wafer surfaces after wet chemical treatment by the microwave reflectance photconductivity decay method with surface electric field

Citation
A. Tada et al., Characterization of Si wafer surfaces after wet chemical treatment by the microwave reflectance photconductivity decay method with surface electric field, JPN J A P 1, 40(5A), 2001, pp. 3069-3074
Citations number
13
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
5A
Year of publication
2001
Pages
3069 - 3074
Database
ISI
SICI code
0021-4922(200105)40:5A<3069:COSWSA>2.0.ZU;2-U
Abstract
Voltage is applied between an external electrode and a Si wafer to control surface recombination, and carrier lifetime is measured by the microwave re flectance photoconductivity decay (mu -PCD) method. The voltage dependence of the lifetime changes depending on the surface Fermi level and the surfac e state density. We apply this method to Si wafers with various chemical tr eatments, and qualitatively characterize the surface properies from the dep endence of lifetime on applied voltage. The change in the surface propertie s with time after the treatment is also investigated.