Electrical properties of Ni-Cr-N thin films deposited by multitarget reactive sputtering

Citation
Y. Sato et al., Electrical properties of Ni-Cr-N thin films deposited by multitarget reactive sputtering, JPN J A P 1, 40(8), 2001, pp. 5091-5094
Citations number
6
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
8
Year of publication
2001
Pages
5091 - 5094
Database
ISI
SICI code
0021-4922(200108)40:8<5091:EPONTF>2.0.ZU;2-8
Abstract
Ni-Cr thin films of various compositions are deposited by multitarget react ive sputtering with nitrogen gas introduction, and the electrical proper-ti es of the films are investigated. An increase in the lattice parameter is o bserved when nitrogen contents are less than 25%, and nitrides are formed i n the deposited films when nitrogen contents reach much higher values. The resistivity of the deposited films at room temperature increases with incre asing nitrogen content, and their temperature coefficient of resistance (TC R) changes from approximately +100 to -100 ppm/degreesC through nearly equa l to zero. Gage factors of the films are about 2 and are independent of the nitrogen content.