Synthesis and surface acoustic wave property of aluminum nitride thin films fabricated on silicon and diamond substrates using the sputtering method

Citation
M. Ishihara et al., Synthesis and surface acoustic wave property of aluminum nitride thin films fabricated on silicon and diamond substrates using the sputtering method, JPN J A P 1, 40(8), 2001, pp. 5065-5068
Citations number
12
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
8
Year of publication
2001
Pages
5065 - 5068
Database
ISI
SICI code
0021-4922(200108)40:8<5065:SASAWP>2.0.ZU;2-9
Abstract
C-axis oriented aluminum nitride (AIN) thin films with a thickness of 1 mum were prepared by reactive DC magnetron sputtering on polycrystalline diamo nd substrates at a substrate temperature of 623 K. The average surface roug hness (R-a) of the AIN thin films was less than 2 nm obtained by locating t he diamond substrates at a position of 100 mot from the aluminum target, Th e full width at half maximum (FWHM) of the rocking curve for the AlN(002) p eak deter-mined by X-ray diffraction analysis was about 0.2 degrees. The su rface acoustic wave (SAW) structures were completed by the deposition of al uminum electrodes on the as-deposited AIN surfaces. The SAW characteristics of an interdigital transducer (IDT)/AlN/diamond structure were investigate d. The phase velocity and coupling coefficient were 10,120 m/s and 0.3%, re spectively.