Deep level study in heteroepitaxial 3C-SiC grown on Si by hexamethyldisilane

Citation
M. Kato et al., Deep level study in heteroepitaxial 3C-SiC grown on Si by hexamethyldisilane, JPN J A P 1, 40(8), 2001, pp. 4943-4947
Citations number
22
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
8
Year of publication
2001
Pages
4943 - 4947
Database
ISI
SICI code
0021-4922(200108)40:8<4943:DLSIH3>2.0.ZU;2-D
Abstract
Deep levels in 3C-SiC on Si grown by chemical vapor deposition using hexame thyldisilane (HMDS) were investigated by the deep level transient spectrosc opy (DLTS). 3C-SiC epilayers, with various thicknesses were grown by changi ng the growth time, Relatively thin epilayers (< 1 mum) showed DLTS signals in a wide temperature range, This indicates that these epilayers have defe cts distributed in a wide energy range. These defects seem to originate fro m the 3C-SiC/Si heterointerface. On the other hand, relatively thick epilay ers (> 2.2 mum) showed only one DLTS peak, which corresponds to a defect ha ving an activation energy of about 0.25 eV, This defect is a donor defect a nd is identical with a defect observed in 3C-SiC grown from SiH4 + C3H8.