Phases of the initialized AgInSbTe phase change optical recording films

Citation
Lh. Chou et al., Phases of the initialized AgInSbTe phase change optical recording films, JPN J A P 1, 40(8), 2001, pp. 4924-4925
Citations number
4
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
8
Year of publication
2001
Pages
4924 - 4925
Database
ISI
SICI code
0021-4922(200108)40:8<4924:POTIAP>2.0.ZU;2-B
Abstract
The Ag-In-Sb-Te active laver transformed into different phases after applyi ng different initialization powers ranging from 150 mW to 900 mW. With an i nitialization power of 250 mW, the rhombohedral Sb crystalline phase was fo rmed. For higher initialization powers, i.e.. 350 mW or 450 mW. the AgSbTe2 crystalline phase and the newly proposed fee Sb crystalline phase started to form. For initialization powers higher than or equal to 550 mW, no rhomb ohedral Sb phase was observed.