Preparation of epitaxial YBa2Cu3O7-y/CeO2 multilayer films on yttria-stabilized zirconia (100) by all-coating-pyrolysis process

Citation
T. Manabe et al., Preparation of epitaxial YBa2Cu3O7-y/CeO2 multilayer films on yttria-stabilized zirconia (100) by all-coating-pyrolysis process, JPN J A P 1, 40(8), 2001, pp. 4866-4869
Citations number
9
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
8
Year of publication
2001
Pages
4866 - 4869
Database
ISI
SICI code
0021-4922(200108)40:8<4866:POEYMF>2.0.ZU;2-K
Abstract
Epitaxial YBa(2)Cu3O(7-x) (Y123)/CeO2 multilayer films were prepared on ytt ria-stabilized zirconia (YSZ) (100) by the all-coating-pyrolysis (All-CP) p rocess, i.e., both an epitaxial Y123 film and a CeO2 buffer laver were fabr icated by a coating-pyrolysis process without using any high vacuum apparat us. A CeO2 buffer layer with smooth surface morphology and excellent in-pla ne alignment was successfully prepared on YSZ(100) by the CP process throug h pyrolysis at 500 degreesC and crystallization at 1200 degreesC in air. Su bsequently, heteroepitaxial growth of Y123 on the CeO2-buffered YSZ(100) wi th an in-plane alignment relationship. Y123[100] parallel to CeO2[011] para llel to YSZ[011], was also achieved by CP process through a two-step [low-p (O-2) of 10(-4) atm/pure O-2] annealing at 740 degreesC. The dc-resistance of the epitaxial Y123/CeO2 film on YSZ(100) showed metallic behavior in the normal state and exhibited T-c,T-zero of 89.5 K by the conventional four p robe method.