Passivation of bulk and surface defects in GaAs grown on Si substrate by radio frequency phosphine/hydrogen plasma exposure

Citation
G. Wang et al., Passivation of bulk and surface defects in GaAs grown on Si substrate by radio frequency phosphine/hydrogen plasma exposure, JPN J A P 1, 40(8), 2001, pp. 4781-4784
Citations number
18
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
8
Year of publication
2001
Pages
4781 - 4784
Database
ISI
SICI code
0021-4922(200108)40:8<4781:POBASD>2.0.ZU;2-L
Abstract
The effects of PH3/H-2 plasma exposure on GaAs grown on Si substrate (GaAs/ Si) were investigated. It was found that corporation of P atoms in H-2 plas ma not only hydrogenated the defect-related recombination centers of GaAs/S i epilayer, but also phosphidized the surface region of GaAs/Si epilayer by forming a phosphidized layer, Electron beam-induced current measurement di rectly proved that the defect-related dark spot density was effectively red uced by adding P atoms into the pure H-2 plasma. In addition, PH3/H-2 plasm a exposure greatly increased the minority carrier lifetime properties and d ecreased the saturation current of the GaAs p(+)-n junction structure grown on Si substrate.