THE DC CIRCUIT MODEL OF A MOS MAGNETIC SENSOR

Authors
Citation
Hm. Yang et Tf. Lei, THE DC CIRCUIT MODEL OF A MOS MAGNETIC SENSOR, Sensors and actuators. A, Physical, 58(2), 1997, pp. 125-127
Citations number
5
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Engineering, Eletrical & Electronic","Instument & Instrumentation
ISSN journal
0924-4247
Volume
58
Issue
2
Year of publication
1997
Pages
125 - 127
Database
ISI
SICI code
0924-4247(1997)58:2<125:TDCMOA>2.0.ZU;2-T
Abstract
In this paper, we have established a d.c. circuit model of a MOS magne tic sensor. The elements of the model, such as input resistance, outpu t resistance, offset voltage source and Hall voltage source, have also been extracted by a new experimental method. With the model, we can a nalyse the complete characteristics of a MOS magnetic sensor to help u s design the post-circuit for signal processing. From our experiments, we find that the output resistance and input resistance are always in versely proportional to the gate bias. The model can facilitate the co mputer-aided design of device and analog circuits in the SPICE environ ment for MOS magnetic sensors.