Fundamental and second-order phonon processes in CdTe and ZnTe - art. no. 094301

Citation
M. Schall et al., Fundamental and second-order phonon processes in CdTe and ZnTe - art. no. 094301, PHYS REV B, 6409(9), 2001, pp. 4301
Citations number
42
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
0163-1829 → ACNP
Volume
6409
Issue
9
Year of publication
2001
Database
ISI
SICI code
0163-1829(20010901)6409:9<4301:FASPPI>2.0.ZU;2-P
Abstract
Fundamental and higher-order photon-phonon interactions dominate the far in frared absorption and dispersion spectrum of most semiconductors and dielec trics. We present a detailed investigation of the temperature dependence of the dielectric function of the important II-VI semiconductors CdTe and ZnT e in the frequency range below 3 THz, between 10 and 300 K. From the dielec tric function we determine the temperature dependence of the fundamental tr ans verse-optical (TO) frequency in CdTe and ZnTe as well as the TO phonon damping rate in CdTe, and the dynamic ionic charge of both crystals is infe r-red from the measurements. Furthermore, our experimental data enable unam biguous assignment of low-frequency absorption bands to sum and difference combinations of fundamental phonon modes at critical points away from the B rillouin zone center.