MOS memory devices based on silicon nanocrystal arrays fabricated by very low energy ion implantation

Citation
P. Normand et al., MOS memory devices based on silicon nanocrystal arrays fabricated by very low energy ion implantation, MAT SCI E C, 15(1-2), 2001, pp. 145-147
Citations number
5
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS
ISSN journal
0928-4931 → ACNP
Volume
15
Issue
1-2
Year of publication
2001
Pages
145 - 147
Database
ISI
SICI code
0928-4931(20010820)15:1-2<145:MMDBOS>2.0.ZU;2-F
Abstract
The electrical characteristics of Si nanocrystal-based MOS memory devices a re studied. The nanocrystals are fabricated into 8-nm thin oxide by very lo w energy Si+ implantation at different doses and subsequent annealing. TEM work suggests that Si nanocrystals develop at a density, size and perfectio n that vary strongly with the implanted dose and these structural features are found compatible with the device transfer characteristics. (C) 2001 Els evier Science B.V. All rights reserved.