The electrical characteristics of Si nanocrystal-based MOS memory devices a
re studied. The nanocrystals are fabricated into 8-nm thin oxide by very lo
w energy Si+ implantation at different doses and subsequent annealing. TEM
work suggests that Si nanocrystals develop at a density, size and perfectio
n that vary strongly with the implanted dose and these structural features
are found compatible with the device transfer characteristics. (C) 2001 Els
evier Science B.V. All rights reserved.