Low noise Nb-based SIS mixer for sub-millimeter wave detection

Citation
Mj. Wang et al., Low noise Nb-based SIS mixer for sub-millimeter wave detection, J PHYS CH S, 62(9-10), 2001, pp. 1731-1736
Citations number
8
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
ISSN journal
0022-3697 → ACNP
Volume
62
Issue
9-10
Year of publication
2001
Pages
1731 - 1736
Database
ISI
SICI code
0022-3697(200109/10)62:9-10<1731:LNNSMF>2.0.ZU;2-C
Abstract
The Nb-based SIS junction fabrication was started in 1996. The main goals o f this project are to establish the capability of high quality SIS junction technology in Taiwan and to fabricate SIS mixer for sub-millimeter wave de tection. In the past few years, we have integrated the fabricating facility and processing steps. The self-alignment method was used for junction defi nition process. The junction size is close to 1 mum in order to minimize it s intrinsic capacitance. The critical current density is required to be gre ater than or equal to 7.5 kA/cm(2) to get a reasonable omegaR(n)C product o f the mixer. The high quality SIS junction was demonstrated from its I-V ch aracteristics. We also fabricated 230 and 350 GHz SIS mixers. The performan ce test of the mixer shows a low noise temperature level. The details of th e mixer fabrication process and performance test will be described in this paper. (C) 2001 Elsevier Science Ltd. All rights reserved.