Hysteretic current-voltage characteristics of all-oxide (LaSr) MnO3/BaTiO3/(LaSr) TiO3 pin-diode

Citation
T. Nakasaka et al., Hysteretic current-voltage characteristics of all-oxide (LaSr) MnO3/BaTiO3/(LaSr) TiO3 pin-diode, JPN J A P 2, 40(5B), 2001, pp. L518-L520
Citations number
8
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
5B
Year of publication
2001
Pages
L518 - L520
Database
ISI
SICI code
0021-4922(20010515)40:5B<L518:HCCOA(>2.0.ZU;2-G
Abstract
All-oxide pin-diodes with the ferroelectric BaTiO3 i-layer were prepared on (100) Nb-doped SrTiO3 substrates by the pulsed laser deposition method and ion mesa-etching. The p- and n-layers, respectively, consisted of (LaSr)Mn O3 and (LaSr)TiO3. The current-voltage (I-V) curves exhibited the built-in voltage of about 0.3 V and the reverse leakage current was about - 1 muA at the voltage of -8 V. Due to the ferroelectricity of BaTiO3, the I-V curves revealed the hysteretic characteristics even when the electron was injecte d into the conduction band of the BaTiO3 layer, suggesting that the remanen t polarization inside the BaTiO3 i-layer is not eliminated even under the c oexistence of the excess carriers (electrons) injected.