Activation of p-type GaN in a pure oxygen ambient

Citation
Tc. Wen et al., Activation of p-type GaN in a pure oxygen ambient, JPN J A P 2, 40(5B), 2001, pp. L495-L497
Citations number
12
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
5B
Year of publication
2001
Pages
L495 - L497
Database
ISI
SICI code
0021-4922(20010515)40:5B<L495:AOPGIA>2.0.ZU;2-B
Abstract
In this study, we activated p-type GaN in a pure oxygen ambient by rapid th ermal annealing. The sheet resistance of p-type GaN was greatly reduced fro m > 10(7) Omega/square to 7.06 x 10(4) Omega/square after annealing in oxyg en ambient at 500 degreesC, The photoluminescence intensity of blue emissio n increased by one order of magnitude compared to the as-grown sample. More over, the sheet resistance of p-type GaN annealed in pure oxygen ambient is lower than that of p-type GaN annealed in nitrogen ambient. The carrier co ncentrations of the samples annealed in oxygen ambient are higher than thos e annealed in nitrogen ambient. The better activation of p-type GaN in oxyg en ambient is due to the higher activity of oxygen than that of nitrogen. O xygen would remove hydrogen that passivates Ma atoms by forming H2O at a lo wer temperature.