Study of oxygen-doped GeSbTe film and its effect as an interface layer on the recording properties in the blue wavelength

Citation
Th. Jeong et al., Study of oxygen-doped GeSbTe film and its effect as an interface layer on the recording properties in the blue wavelength, JPN J A P 1, 40(3B), 2001, pp. 1609-1612
Citations number
14
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
3B
Year of publication
2001
Pages
1609 - 1612
Database
ISI
SICI code
0021-4922(200103)40:3B<1609:SOOGFA>2.0.ZU;2-S
Abstract
An oxygen-doped GeSbTe interface layer improves the overwriting characteris tics of the phase-change optical disk in the blue wavelength. The thermal a nd optical properties of oxygen-doped GeSbTc film and its crystal structure were investigated. Crystallization temperature and activation energy of th e amorphous Ge-Sb-Te-O films are increased with the oxygen concentration wh ile the melting point is decreased. The refractive index of the crystalline state monotonically increases with the oxygen concentration of the film. w hile its extinction coefficient monotonically decreases. In terms of the cr ystalline structure. fcc characteristic peaks disappear gradually with oxyg en concentration, and above 35 at.% of oxygen, hexagonal peaks appear.