It is discovered for the first time that deep levels in n-type 3C-SiC/Si ar
e passivated by hydrogen. Hydrogen is introduced by a plasma treatment, and
its effects are investigated by deep level transient spectroscopy (DLTS).
3C-SiC grown on Si using silane and propane has a deep level with an activa
tion energy of 0.3 eV. This defect is passivated by hydrogen, and its major
ity is reactivated by annealing at a temperature above 500 degreesC. The pl
asma treatment forms new deep levels in the near-surface region of the samp
le. Although these levels are almost annealed out at 400 degreesC, differen
t kinds of deep levels appear after annealing in the near-surface region. T
he concentration is low (< 10(14) cm(-3)) for annealing at 400 degreesC, an
d rapidly increases with increasing annealing temperature up to 600 degrees
C. Thus, the concentration of the deep levels in 3C-SiC is decreased by the
hydrogen plasma treatment and subsequent annealing at 400 degreesC without
the introduction of high densities of plasma-induced deep levels.