Passivation of deep levels in 3C-SiC on Si by a hydrogen plasma treatment

Citation
M. Kato et al., Passivation of deep levels in 3C-SiC on Si by a hydrogen plasma treatment, JPN J A P 1, 40(4B), 2001, pp. 2983-2986
Citations number
9
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
4B
Year of publication
2001
Pages
2983 - 2986
Database
ISI
SICI code
0021-4922(200104)40:4B<2983:PODLI3>2.0.ZU;2-H
Abstract
It is discovered for the first time that deep levels in n-type 3C-SiC/Si ar e passivated by hydrogen. Hydrogen is introduced by a plasma treatment, and its effects are investigated by deep level transient spectroscopy (DLTS). 3C-SiC grown on Si using silane and propane has a deep level with an activa tion energy of 0.3 eV. This defect is passivated by hydrogen, and its major ity is reactivated by annealing at a temperature above 500 degreesC. The pl asma treatment forms new deep levels in the near-surface region of the samp le. Although these levels are almost annealed out at 400 degreesC, differen t kinds of deep levels appear after annealing in the near-surface region. T he concentration is low (< 10(14) cm(-3)) for annealing at 400 degreesC, an d rapidly increases with increasing annealing temperature up to 600 degrees C. Thus, the concentration of the deep levels in 3C-SiC is decreased by the hydrogen plasma treatment and subsequent annealing at 400 degreesC without the introduction of high densities of plasma-induced deep levels.