Advanced Co salicide technology for sub-0.20 mu m fully-depleted SOI devices

Citation
T. Ichimori et N. Hirashita, Advanced Co salicide technology for sub-0.20 mu m fully-depleted SOI devices, JPN J A P 1, 40(4B), 2001, pp. 2881-2886
Citations number
9
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
4B
Year of publication
2001
Pages
2881 - 2886
Database
ISI
SICI code
0021-4922(200104)40:4B<2881:ACSTFS>2.0.ZU;2-Y
Abstract
The mechanism of buried oxide (BOX) breakdown in fully-depleted silicon-on- insulator (FD SOI) devices is investigated by cross-sectional transmission electron microscopy (XTEM), and pinhole formation in the BOX at the bottom of a contact hole is found to be the predominant reason for this break-down . Since this it is attributed to nonuniform silicidation of thin SOI films, improvement of silicide surface flatness is strongly required. In this pap er, we present the significant effect of our new salicide on the silicide s urface structure, which has enabled volume production of 0.20 mum in FD SOI devices. Using this contact-hole-etching-prior-to-the-second-annealing (CH EPSA) cobalt salicide, perfect BOX yield is obtained down to 25-nm-thick SO I on commercially available separation-by-implanted-oxygen (SIMOX) substrat es, which falls in the 0.13-0.10 mum range technology node.