Microscopic observation of X-ray irradiation damage in ultra-thin SiO2 films

Citation
K. Ohmori et al., Microscopic observation of X-ray irradiation damage in ultra-thin SiO2 films, JPN J A P 1, 40(4B), 2001, pp. 2823-2826
Citations number
15
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
4B
Year of publication
2001
Pages
2823 - 2826
Database
ISI
SICI code
0021-4922(200104)40:4B<2823:MOOXID>2.0.ZU;2-#
Abstract
X-ray irradiation damage in ultra-thin SiO2 films has been investigated on an atomic scale using scanning tunneling microscopy (STM). From the X-ray p hotoelectron spectroscopy time-dependent measurement, the creation of hole traps and the successive electron trapping are observed with increasing irr adiation time. In both cases, bright spot, are observed in the STM images. We conclude that the bright spots which appeared in the hole trapping durat ion correspond to the hole traps in the SiO2 film, The bright spots which a ppeared in the electron trapping duration are larger in height and diameter in the STM images than those that appeared in the hole trapping duration. Although most of the bright spots in the hole trapping duration vanish with annealing at 600 degreesC, the larger bright spots remain after the anneal ing. It is considered that the larger bright spots in the electron trapping duration correspond to leakage sites in the ultra-thin SiO2 films. Moreove r, these trap sites are considered to originate from surface defects prc-ex isting on a clean Si(100) surface.