Reliability of thin gate oxides irradiated under X-ray lithography conditions

Citation
Bj. Cho et al., Reliability of thin gate oxides irradiated under X-ray lithography conditions, JPN J A P 1, 40(4B), 2001, pp. 2819-2822
Citations number
22
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
4B
Year of publication
2001
Pages
2819 - 2822
Database
ISI
SICI code
0021-4922(200104)40:4B<2819:ROTGOI>2.0.ZU;2-G
Abstract
The effect of X-ray lithography (XRL) process on the reliability of thin ga te oxide has been investigated. A large increase in the low-field excess le akage current was observed on irradiated oxides, which was very similar to the electrical stress-induced leakage currents. However, it has been found that the long-term reliability of ultra-thin gate oxide is not affected by XRL process. The excess leakage current could be eliminated by thermal anne aling at 400 degreesC and above and no residual damages in the oxide were o bserved after the annealing.