The effect of X-ray lithography (XRL) process on the reliability of thin ga
te oxide has been investigated. A large increase in the low-field excess le
akage current was observed on irradiated oxides, which was very similar to
the electrical stress-induced leakage currents. However, it has been found
that the long-term reliability of ultra-thin gate oxide is not affected by
XRL process. The excess leakage current could be eliminated by thermal anne
aling at 400 degreesC and above and no residual damages in the oxide were o
bserved after the annealing.