Nitrogen doping into CU2O thin films deposited by reactive radio-frequencymagnetron sputtering

Citation
So. Ishizuka et al., Nitrogen doping into CU2O thin films deposited by reactive radio-frequencymagnetron sputtering, JPN J A P 1, 40(4B), 2001, pp. 2765-2768
Citations number
7
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
4B
Year of publication
2001
Pages
2765 - 2768
Database
ISI
SICI code
0021-4922(200104)40:4B<2765:NDICTF>2.0.ZU;2-X
Abstract
The effects of nitrogen doping into Cu2O thin films deposited by reactive r adio-frequency magnetron sputtering were studied. It was found that nitroge n is an effective p-type dopant for Cu2O and the hole density can be contro lled from 1 x 10(15) cm(-3) to approximately 10(17)cm(-3). The acceptor lev el of nitrogen was estimated to be about 0.14 eV by temperature-dependent H all effect measurements and this value roughly agrees with that obtained by the effective mass theory. No significant degradation of structural and op tical properties induced by nitrogen doping were observed. The resistivity of 15.2 Omega cm was obtained for a relatively high nitrogen flow rate, whi ch is the lowest value reported to date for Cu2O thin films.