A new high speed switching bipolar power transistor with corrugated base junctions

Authors
Citation
C. Park et K. Lee, A new high speed switching bipolar power transistor with corrugated base junctions, JPN J A P 1, 40(4B), 2001, pp. 2717-2720
Citations number
13
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
4B
Year of publication
2001
Pages
2717 - 2720
Database
ISI
SICI code
0021-4922(200104)40:4B<2717:ANHSSB>2.0.ZU;2-W
Abstract
A new structure of the bipolar power transistor with corrugated base juncti ons is proposed for fast switching applications. The proposed bipolar power transistors with corrugated base junctions are fabricated without any addi tional process steps. We investigated the electrical characteristics of the transistor such as current gain, saturation voltages between the collector and the emitter and turn-off transient times, and compared them with those of the conventional bipolar transistors with parallel plane base junctions . It is shown that the bipolar transistors with corrugated base junctions h ave not only shallow saturation but also built-in field accelerating the re combination of excess electrons and holes in the base region. The storage t imes of the bipolar power transistors with corrugated base junctions are sh orter by above 25% than those of the conventional bipolar power transistors .