Surface channel metal gate complementary MOS with light counter doping andsingle work function gate electrode

Citation
Kt. Nishinohara et al., Surface channel metal gate complementary MOS with light counter doping andsingle work function gate electrode, JPN J A P 1, 40(4B), 2001, pp. 2603-2606
Citations number
3
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
4B
Year of publication
2001
Pages
2603 - 2606
Database
ISI
SICI code
0021-4922(200104)40:4B<2603:SCMGCM>2.0.ZU;2-W
Abstract
We propose a channel engineering guideline for the low threshold voltage (V -th) metal oxide silicon field effect transistor (MOSFET) with metal gate, which is promising for highly miniaturized MOSFETs. For lowering V-th of me tal gate MOSFET, counter doping is useful, However, a buried channel with h eavy counter doping has several disadvantages, such as the degradation of s ubthreshold swing. In this work, using a design with light counter doping, a surface channel complementary metal oxide silicon (CMOS) of low V-th with a single work function gate electrode was successfully fabricated showing superior characteristics. Device simulation was used to investigate the imp acts of the channel profile of such a device. It was found that using count er doping with low concentration to an optimized depth results in better su bthreshold characteristics than that using shallow counter doping with high concentration. A lower counter dopant concentration also suppresses V-th d eviations. The damascene gate process was used in the fabrication.