Quantitative understanding of electron mobility limited by coulomb scattering in metal oxide semiconductor field effect transistors with N2O and NO oxynitrides

Citation
T. Ishihara et al., Quantitative understanding of electron mobility limited by coulomb scattering in metal oxide semiconductor field effect transistors with N2O and NO oxynitrides, JPN J A P 1, 40(4B), 2001, pp. 2597-2602
Citations number
12
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
4B
Year of publication
2001
Pages
2597 - 2602
Database
ISI
SICI code
0021-4922(200104)40:4B<2597:QUOEML>2.0.ZU;2-L
Abstract
A new model for electron mobility limited by Coulomb scattering, mu (c), fo r metal oxide semiconductor field effect transistors (MOSFETs) with N2O and NO oxynitrides has been proposed. It is shown that this model accurately r epresents the experimental mobility behavior, such as the difference of it, between pure oxides and oxynitrides and the dependence on the inversion la yer electron density, using physically appropriate parameters of Coulomb sc attering centers. The effects of the location of fixed charges and the mult i-subband occupation are examined to investigate the physical meaning of th is new model.