Fully integrated spiral-type microtransformers on a silicon substrate

Authors
Citation
Jy. Park et Ju. Bu, Fully integrated spiral-type microtransformers on a silicon substrate, JPN J A P 1, 40(6A), 2001, pp. 4023-4026
Citations number
12
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
6A
Year of publication
2001
Pages
4023 - 4026
Database
ISI
SICI code
0021-4922(200106)40:6A<4023:FISMOA>2.0.ZU;2-G
Abstract
Surface micromachining techniques have been utilized to realize microtransf ormers on a silicon substrate for being integrated with a multi-chip packag e, allowing compact integration with chips. complementary metal-oxide-semic onductor (CMOS) circuits, sensors, and other components, Two different micr otransformers comprised of two-layer vertically stacked spiral-type copper conductor lines and permalloy magnetic cores have been designed, fabricated , and characterized. Low temperature processes have been chosen for fabrica ting these microtransformers. The fabricated microtransformers have been te sted and compared for finding out better geometries for integrated microtra nsformers. Electroplated thick permalloy cores and copper coils have been u tilized for obtaining better performance characteristics in the intermediat e frequency range. The fabricated microtransformers have a turn ratio of 1, coupling coefficient of 0.85, dc resistance of 3.3 Omega, and gain charact eristics of -5 dB, respectively. Since these devices have also high current carrying capability (up to 2A steady DC current), they are suitable for in tegrated power converter applications.