High-power 1.5 mu m InGaAsP/InP strained quantum wells integrated superluminescent light source with tilted structure

Citation
Y. Liu et al., High-power 1.5 mu m InGaAsP/InP strained quantum wells integrated superluminescent light source with tilted structure, JPN J A P 1, 40(6A), 2001, pp. 4009-4010
Citations number
9
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
6A
Year of publication
2001
Pages
4009 - 4010
Database
ISI
SICI code
0021-4922(200106)40:6A<4009:H1MMIS>2.0.ZU;2-N
Abstract
Based on our original idea about monolithic integration of the superlumines cent diode (SLD) with a semiconductor optical amplifier (SOA), the axis of the current injection area was tilted. High superluminescent power (more th an 200 mW) at 1.5 mum was obtained by optimizing the tilted device structur e. No lasing mode was discovered within the range of measurement. In additi on, it was discovered that the tilted integrated device had the function of lasing suppression, to some extent.