GaAsP pn diode on Si substrate grown by metalorganic molecular beam epitaxy for visible light-emitting devices

Citation
M. Yoshimoto et al., GaAsP pn diode on Si substrate grown by metalorganic molecular beam epitaxy for visible light-emitting devices, JPN J A P 1, 40(6A), 2001, pp. 3953-3959
Citations number
28
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
6A
Year of publication
2001
Pages
3953 - 3959
Database
ISI
SICI code
0021-4922(200106)40:6A<3953:GPDOSS>2.0.ZU;2-4
Abstract
Luminescent GaAs1-xPx (0.2 < x < 0.7) was grown on a Si substrate by metalo rganic molecular beam epitaxy (MOMBE). The insertion of a GaP buffer layer grown at a low temperature was essential to obtain luminescent GaAsP on Si. The growth condition of the GaP buffer layer was optimized based on the re sults of atomic force microscopy, reflection high-energy electron diffracti on, and X-ray diffraction. Chemical and thermal treatments of the Si substr ate were also carefully examined to obtain a flat surface and a sharp X-ray rocking curve of the GaAsP epilayer. The GaAsP epilayer on Si emits photol uminescence ascribed to the donor acceptor pair emission at a low temperatu re, and to a band-edge emission at room temperature. The GaAsP epilayer was doped for both n- and p-types with carrier concentrations up to 2 x 10(18) and 6 x 10(19) cm(-3), respectively. A GaAsP pn junction on a Gap substrat e with a total thickness of 1.25 mum shows bright electroluminescence, indi cating a tough nature against the large lattice mismatch. The preliminary G aAsP pn junctions on Si showed infrared and visible luminescence at room te mperature.