Temporal response of UV sensors made of highly oriented diamond films by 193 and 313 nm laser pulses

Citation
K. Hayashi et al., Temporal response of UV sensors made of highly oriented diamond films by 193 and 313 nm laser pulses, DIAM RELAT, 10(9-10), 2001, pp. 1794-1798
Citations number
34
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
0925-9635 → ACNP
Volume
10
Issue
9-10
Year of publication
2001
Pages
1794 - 1798
Database
ISI
SICI code
0925-9635(200109/10)10:9-10<1794:TROUSM>2.0.ZU;2-M
Abstract
Ultraviolet sensors were fabricated on a Si substrate using an undoped, hig hly oriented diamond film with Pt and Al interdigited electrodes with a gap length of 5, 10 and 15 mum. Transient voltage outputs due to photocurrent of the sensors under a bias voltage of 20, 40 and 80 V were measured by the pulsed irradiation of an ArF excimer laser (lambda = 193 am, pulse width = 5 ns) or a dye laser (lambda = 313 nm, pulse width = 7 ns). It was found t hat the transient voltage output by the ArF laser irradiation on a sensor ( Pt electrodes with a 15-mum gap) consisted of main and second peaks at 1.1 and 3.8 ns, respectively, when the bias voltage was 20 V. The FWHM was appr oximately 4 ns. The second peak was observed in the output signals of most sensors. On the other hand, the voltage output was two orders of magnitude weaker when the sensors were irradiated by the dye laser. (C) 2001 Elsevier Science B.V. All rights reserved.