An under-gate triode structure field emission display with carbon nanotubeemitters

Citation
Ys. Choi et al., An under-gate triode structure field emission display with carbon nanotubeemitters, DIAM RELAT, 10(9-10), 2001, pp. 1705-1708
Citations number
12
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
0925-9635 → ACNP
Volume
10
Issue
9-10
Year of publication
2001
Pages
1705 - 1708
Database
ISI
SICI code
0925-9635(200109/10)10:9-10<1705:AUTSFE>2.0.ZU;2-M
Abstract
A new triode structure for field emission displays based on carbon nanotube emitters is demonstrated. In this structure, gate electrodes are located u nderneath the cathode electrodes with an in-between insulating layer, a so- called under-gate type triode structure. Although the gate is on the opposi te side of the anode with respect to the cathode electrodes, modulation of electron emission from the carbon nanotube emitters by the gate voltage is confirmed. The simple structure and fabrication process may lead to practic al applications for the under-gate triode type structure. (C) 2001 Publishe d by Elsevier Science B.V.