Epitaxial grown K1-xRbxTiOPO4 films with extremely flat surfaces for waveguiding

Citation
C. Dubs et al., Epitaxial grown K1-xRbxTiOPO4 films with extremely flat surfaces for waveguiding, OPT MATER, 17(4), 2001, pp. 477-481
Citations number
19
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
OPTICAL MATERIALS
ISSN journal
0925-3467 → ACNP
Volume
17
Issue
4
Year of publication
2001
Pages
477 - 481
Database
ISI
SICI code
0925-3467(200109)17:4<477:EGKFWE>2.0.ZU;2-0
Abstract
We report on epitaxial {100} K1-xRbxTiOPO4 waveguide films for the visible spectral range grown on KTiOPO4 substrates by liquid phase epitaxy. Using t he m-line technique a refractive index increase of Deltan(1) approximate to 0.007 and Deltan(z) approximate to 0.004 for TM and TE polarisation has be en determined for a K0.78Rb0.22TiOPO4 film. Optical transmission and nearfi eld distribution are comparable to conventional ion-exchanged waveguides. T ypical attenuation of about 1 dB/cm for both TM and TE polarisation was obt ained at lambda = 532 and 1064 nm. Energy-dispersive X-ray spectrometry rev eals solid-solution films with graded rubidium composition profiles. X-ray rocking curve analyses confirm the epitaxial growth process and indicate pe rfect and relaxed K1-xRbxTiOPO4 films. Atomic force microscopy investigatio ns reveal regular step structures with step heights Deltah < 1.3 nm resulti ng in rms-roughness values of <approximate to>0.4 nm. (C) 2001 Elsevier Sci ence B.V. All rights reserved.