GaAs-substrate-based long-wave active materials with type-II band alignments

Citation
Sr. Johnson et al., GaAs-substrate-based long-wave active materials with type-II band alignments, J VAC SCI B, 19(4), 2001, pp. 1501-1504
Citations number
6
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
1071-1023 → ACNP
Volume
19
Issue
4
Year of publication
2001
Pages
1501 - 1504
Database
ISI
SICI code
1071-1023(200107/08)19:4<1501:GLAMWT>2.0.ZU;2-H
Abstract
The optimized growth conditions and evidence for type-II alignment in GaAsS b/InGaAs heterostructures are reported. The asymmetric GaAsSb/InGaAs bilaye r quantum well grown on GaAs shows promising results for device application s around the wavelength of 1.3 mum. Uncompensated type-II GaAs/GaAsSb/GaAs quantum-well systems and strain-compensated GaAsP/GaAs/GaAsSb/GaAs/GaAsP qu antum-well systems are compared for 1.3 mum applications. Inhomogeneous pho toluminescence-linewidth broadening due to lateral composition and thicknes s variation is reduced from 74 to 40 meV when GaAsP strain-compensation lay ers are added to GaAsSb-based trilayer quantum-well systems, (C) 2001 Ameri can Vacuum Society.