Fabrication of gated niobium nitride field emitter array

Citation
Y. Gotoh et al., Fabrication of gated niobium nitride field emitter array, J VAC SCI B, 19(4), 2001, pp. 1373-1376
Citations number
10
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
1071-1023 → ACNP
Volume
19
Issue
4
Year of publication
2001
Pages
1373 - 1376
Database
ISI
SICI code
1071-1023(200107/08)19:4<1373:FOGNNF>2.0.ZU;2-U
Abstract
We have fabricated a gated niobium nitride field emitter by the transfer mo ld method. A silicon mold was fabricated by anisotropical etching, followed by oxidation of the mold and deposition of niobium nitride. Niobium nitrid e thin films were prepared by ion-beam-assisted deposition. After attaching the sample to a glass substrate, the silicon mold was removed by mechanica l and wet etching. A molybdenum thin film was then deposited by electron-be am evaporation. Formation of a gate aperture and an insulating silicon diox ide layer were performed by wet etching of only the apex, with other region s being protected by a photoresist layer. An electron emission test of the fabricated emitter array was performed in a high vacuum. We confirmed elect ron emission of up to 0.1 muA at the emitter-gate voltage of 30 V. (C) 2001 American Vacuum Society.