Fundamental connection between hydrogen/deuterium desorption at silicon surfaces in ultrahigh vacuum and at oxide/silicon interfaces in metal-oxide-semiconductor devices

Citation
Kg. Cheng et al., Fundamental connection between hydrogen/deuterium desorption at silicon surfaces in ultrahigh vacuum and at oxide/silicon interfaces in metal-oxide-semiconductor devices, J VAC SCI B, 19(4), 2001, pp. 1119-1123
Citations number
21
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
1071-1023 → ACNP
Volume
19
Issue
4
Year of publication
2001
Pages
1119 - 1123
Database
ISI
SICI code
1071-1023(200107/08)19:4<1119:FCBHDA>2.0.ZU;2-H
Abstract
The fundamental connection between electron stimulated desorption (ESD) of hydrogen (H)/deuterium (D) at silicon surfaces in ultrahigh vacuum and hot- carrier-stimulated desorption of H/D at the oxide/silicon interfaces in com plementary metal-oxide-semiconductor (CMOs) devices is presented. The depen dences of device degradation on carrier energy and current density were stu died on two generations of CMOs devices. The results suggest that the inter face degradation in long channel devices is primarily due to the desorption of HID by high energy electrons through the direct electronic desorption m echanism, while the multiple vibrational heating mechanism becomes importan t for ESD of HID in deep submicron devices. By measuring interface trap gen eration at various stressing conditions in large time scales, we also provi de experimental evidence to show that, unlike the uniform energy distributi on of Si-H on silicon surfaces, the disordered interface environment introd uces a variation of Si-H bond strength at the interface. (C) 2001 American Vacuum Society.