High-resolution CdTe detector and applications to imaging devices

Citation
T. Takahashi et al., High-resolution CdTe detector and applications to imaging devices, IEEE NUCL S, 48(3), 2001, pp. 287-291
Citations number
15
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Nuclear Emgineering
Journal title
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
ISSN journal
0018-9499 → ACNP
Volume
48
Issue
3
Year of publication
2001
Pages
287 - 291
Database
ISI
SICI code
0018-9499(200106)48:3<287:HCDAAT>2.0.ZU;2-Y
Abstract
Using a high quality Cadmium Telluride (CdTe) wafer, we formed a Schottky j unction and operated the detector as a diode (CdTe diode). The low leakage current of the CdTe diode allows us to apply a much higher bias voltage tha n was possible with the previous CdTe detectors. For a relatively thin dete ctor of similar to 0.5 mm thick, the high bias voltage results in a high el ectric field in the device. Both the improved charge collection efficiency and the low-leakage current lead to an energy resolution of 1.1 keV FWHM at 60 keV for a 2 x 2 mm(2) device and 2 keV for a 10 x 10 mm(2) device at 5 degreesC without any charge-loss correction electronics. For astrophysical applications, we have developed an initial prototype CdTe pixel detector ba sed on the CdTe diode. The detector has 400 pixels with a pixel size of 625 x 625 mum(2). Each pixel is gold-stud bonded to a fanout board and routed to a front end ASIC to measure pulse height information for each gamma -ray photon.