A 0.2-mum self-aligned selective-epitaxial-growth (SEG) SiGe heterojunction
bipolar transistor (HBT), with shallow-trench and dual-deep-trench isolati
ons and Ti-salicide electrodes, has been developed. The 0.6-mum-wide Si-cap
/SiGe-base multilayer was selectively grown by UHV/CVD. The process, except
the SEG, is almost completely compatible with well-established bipolar-CMO
S technology, and the SiGe HBTs were fabricated on a 200-mm wafer line. The
SiGe HBTs have demonstrated a peak cutoff frequency of 90 GHz, a peak maxi
mum oscillation frequency of 107 GHz, and an ECL gate delay time of 6.7 ps.
Four-level interconnects, including NEM capacitors and high-Q inductors, w
ere formed by chemical mechanical polishing.