A 0.2-mu m self-aligned selective-epitaxial-growth SiGeHBT featuring 107-GHz f(max) and 6.7-ps ECL

Citation
K. Washio et al., A 0.2-mu m self-aligned selective-epitaxial-growth SiGeHBT featuring 107-GHz f(max) and 6.7-ps ECL, IEEE DEVICE, 48(9), 2001, pp. 1989-1994
Citations number
11
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
0018-9383 → ACNP
Volume
48
Issue
9
Year of publication
2001
Pages
1989 - 1994
Database
ISI
SICI code
0018-9383(200109)48:9<1989:A0MSSS>2.0.ZU;2-6
Abstract
A 0.2-mum self-aligned selective-epitaxial-growth (SEG) SiGe heterojunction bipolar transistor (HBT), with shallow-trench and dual-deep-trench isolati ons and Ti-salicide electrodes, has been developed. The 0.6-mum-wide Si-cap /SiGe-base multilayer was selectively grown by UHV/CVD. The process, except the SEG, is almost completely compatible with well-established bipolar-CMO S technology, and the SiGe HBTs were fabricated on a 200-mm wafer line. The SiGe HBTs have demonstrated a peak cutoff frequency of 90 GHz, a peak maxi mum oscillation frequency of 107 GHz, and an ECL gate delay time of 6.7 ps. Four-level interconnects, including NEM capacitors and high-Q inductors, w ere formed by chemical mechanical polishing.