High power 1.5 mu m InGaAsP/InP integrated superluminescent light source

Citation
Y. Liu et al., High power 1.5 mu m InGaAsP/InP integrated superluminescent light source, CHIN PHYS L, 18(8), 2001, pp. 1074-1077
Citations number
8
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics
Journal title
CHINESE PHYSICS LETTERS
ISSN journal
0256-307X → ACNP
Volume
18
Issue
8
Year of publication
2001
Pages
1074 - 1077
Database
ISI
SICI code
0256-307X(200108)18:8<1074:HP1MMI>2.0.ZU;2-B
Abstract
The axis of the integrated superluminescent light source was tilted with re spect to the output facet normal for lasing suppression. A new phenomenon ( lasing suppression) was observed in the tilted integrated device. Three new schemes were proposed and demonstrated further to suppress the lasing by a nalysing the reason for lasing in the tilted structure. The lasing was supp ressed successfully at high pumping levels, and high superluminescent power s (more than 300 mW) were obtained at a pulsed condition with the spectral full width at half maximum of 25-30 nm.