Nonlinear operation of GaInAs/InP-based three-terminal ballistic junctions

Citation
I. Shorubalko et al., Nonlinear operation of GaInAs/InP-based three-terminal ballistic junctions, APPL PHYS L, 79(9), 2001, pp. 1384-1386
Citations number
15
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
79
Issue
9
Year of publication
2001
Pages
1384 - 1386
Database
ISI
SICI code
0003-6951(20010827)79:9<1384:NOOGTB>2.0.ZU;2-0
Abstract
We report on nonlinear electrical properties of three-terminal ballistic ju nctions (TBJs) based on high-electron-mobility GaInAs/InP quantum-well stru ctures. Nonlinear electrical transport behavior of the TBJs is found, and w e show a correlation between this behavior and the linear regime of electro n transmission in the devices. We also study device geometry effects on the se electrical properties of the TBJs. Finally, we demonstrate room-temperat ure operation of the devices. The results obtained are compared with recent predictions by Xu [H. Q. Xu, Appl. Phys. Lett. 78, 2064 (2001)] and good a greement is found. (C) 2001 American Institute of Physics.