Simple and accurate expressions for distributed mutual inductance and resistance of semiconducting interconnects

Citation
H. Ymeri et al., Simple and accurate expressions for distributed mutual inductance and resistance of semiconducting interconnects, APPL PHYS L, 79(9), 2001, pp. 1378-1380
Citations number
9
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
79
Issue
9
Year of publication
2001
Pages
1378 - 1380
Database
ISI
SICI code
0003-6951(20010827)79:9<1378:SAAEFD>2.0.ZU;2-R
Abstract
An analytic model is presented (based on the induced current density distri bution inside a silicon substrate) to calculate the frequency-dependent dis tributed mutual inductance and the associated distributed series mutual res istance of silicon semiconducting integrated circuit (IC) interconnects. Th e validity of the proposed model was checked by a comparison with a quasi-s tatic transmission electron microscopy spectral domain approach and an equi valent-circuit modeling procedure. It is found that the silicon semiconduct ing substrate skin effect must be considered for accurate prediction of the high-frequency characteristics of IC interconnects. (C) 2001 American Inst itute of Physics.