Simple and accurate expressions for distributed mutual inductance and resistance of semiconducting interconnects

Ymeri, H Nauwelaers, B Maex, K

H. Ymeri et al., Simple and accurate expressions for distributed mutual inductance and resistance of semiconducting interconnects, APPL PHYS L, 79(9), 2001, pp. 1378-1380

9

INGLESE

Article

Apllied Physucs/Condensed Matter/Materiales Science

APPLIED PHYSICS LETTERS

0003-6951 → ACNP

79

9

2001

1378 - 1380

ISI

0003-6951(20010827)79:9<1378:SAAEFD>2.0.ZU;2-R

An analytic model is presented (based on the induced current density distri bution inside a silicon substrate) to calculate the frequency-dependent dis tributed mutual inductance and the associated distributed series mutual res istance of silicon semiconducting integrated circuit (IC) interconnects. Th e validity of the proposed model was checked by a comparison with a quasi-s tatic transmission electron microscopy spectral domain approach and an equi valent-circuit modeling procedure. It is found that the silicon semiconduct ing substrate skin effect must be considered for accurate prediction of the high-frequency characteristics of IC interconnects. (C) 2001 American Inst itute of Physics.