Longitudinal optic phonon-plasmon coupling in delta-doped metamorphic InAlAs/InGaAs high-electron-mobility transistor structures on GaAs substrates

Citation
Cp. Jiang et al., Longitudinal optic phonon-plasmon coupling in delta-doped metamorphic InAlAs/InGaAs high-electron-mobility transistor structures on GaAs substrates, APPL PHYS L, 79(9), 2001, pp. 1375-1377
Citations number
16
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
79
Issue
9
Year of publication
2001
Pages
1375 - 1377
Database
ISI
SICI code
0003-6951(20010827)79:9<1375:LOPCID>2.0.ZU;2-K
Abstract
InAlAs/InGaAs metamorphic high-electron-mobility transistor structures with different spacer layers on GaAs substrates are characterized by Raman meas urements. The influence of In0.52Al0.48As spacer thickness on longitudinal optic phonon-plasmon coupling is investigated. It is found that the intensi ty of GaAs-like longitudinal optic phonon, which couples with collective in tersubband transitions of two-dimensional electron gas, is strongly affecte d by the different subband energy spacings, subband electron concentrations , and wave function distributions, which are determined by different spacer thicknesses. (C) 2001 American Institute of Physics.