Sw. Seo et al., GaN metal-semiconductor-metal photodetectors grown on lithium gallate substrates by molecular-beam epitaxy, APPL PHYS L, 79(9), 2001, pp. 1372-1374
The growth, fabrication, and characterization of ultraviolet metal-semicond
uctor-metal (MSM) GaN photodetectors grown on LiGaO2 by molecular-beam epit
axy are reported herein. GaN/LiGaO2 material with dislocation densities of
approximately 10(8) cm(-2) and x-ray diffraction (00.4) full width at half
maximum of 75 arcsec results in MSMs showing high responsivity, 0.105 A/W,
at a reverse bias voltage of 20 V at 308 nm, and low dark currents of 7.88
pA at a 60 V reverse bias. Given the etch selectivity of the GaN/LiGaO2 sys
tem and the excellent performance of these devices, GaN device integration
onto alternative substrates appears promising. (C) 2001 American Institute
of Physics.