GaN metal-semiconductor-metal photodetectors grown on lithium gallate substrates by molecular-beam epitaxy

Citation
Sw. Seo et al., GaN metal-semiconductor-metal photodetectors grown on lithium gallate substrates by molecular-beam epitaxy, APPL PHYS L, 79(9), 2001, pp. 1372-1374
Citations number
9
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
79
Issue
9
Year of publication
2001
Pages
1372 - 1374
Database
ISI
SICI code
0003-6951(20010827)79:9<1372:GMPGOL>2.0.ZU;2-T
Abstract
The growth, fabrication, and characterization of ultraviolet metal-semicond uctor-metal (MSM) GaN photodetectors grown on LiGaO2 by molecular-beam epit axy are reported herein. GaN/LiGaO2 material with dislocation densities of approximately 10(8) cm(-2) and x-ray diffraction (00.4) full width at half maximum of 75 arcsec results in MSMs showing high responsivity, 0.105 A/W, at a reverse bias voltage of 20 V at 308 nm, and low dark currents of 7.88 pA at a 60 V reverse bias. Given the etch selectivity of the GaN/LiGaO2 sys tem and the excellent performance of these devices, GaN device integration onto alternative substrates appears promising. (C) 2001 American Institute of Physics.