Formation of a p-type quantum dot at the end of an n-type carbon nanotube

Citation
Jw. Park et Pl. Mceuen, Formation of a p-type quantum dot at the end of an n-type carbon nanotube, APPL PHYS L, 79(9), 2001, pp. 1363-1365
Citations number
17
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
79
Issue
9
Year of publication
2001
Pages
1363 - 1365
Database
ISI
SICI code
0003-6951(20010827)79:9<1363:FOAPQD>2.0.ZU;2-#
Abstract
We use field effect doping to study both electron- (n) and hole- (p) type c onduction in a semiconducting carbon nanotube. We find that, in the n-type region, the ends of the tube remain p- type due to doping by the metal cont acts. As a result, a p-n junction forms near the contact, creating a small, p-type quantum dot between the p-n junction and the contact. This zero-dim ensional quantum dot at the end of a one-dimensional semiconductor is the r educed dimensional analog of the two-dimensional inversion layer that forms at the boundary of a gated three-dimensional semiconductor. (C) 2001 Ameri can Institute of Physics.