Nonlinear transport properties in multiwall carbon nanotube heterojunctions

Citation
Jo. Lee et al., Nonlinear transport properties in multiwall carbon nanotube heterojunctions, APPL PHYS L, 79(9), 2001, pp. 1351-1353
Citations number
12
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
79
Issue
9
Year of publication
2001
Pages
1351 - 1353
Database
ISI
SICI code
0003-6951(20010827)79:9<1351:NTPIMC>2.0.ZU;2-V
Abstract
Electronic transport properties of a heterostructure junction made of two d ifferent multiwall carbon nanotubes are studied. Independent measurement of the current-voltage characteristics of each nanotube revealed that both of them were lightly p-doped semiconductors with energy gaps whose magnitudes are widely different from each other. The current-voltage characteristics measured across the heterojunction show reproducible rectifying diode behav ior. The forward bias current across the heterojunction increases rapidly w ith the application of a positive gate bias voltage, implying an n-type gat e response. (C) 2001 American Institute of Physics.