Measurements of geometric enhancement factors for silicon nanopillar cathodes using a scanning tunneling microscope

Citation
Pa. Lewis et al., Measurements of geometric enhancement factors for silicon nanopillar cathodes using a scanning tunneling microscope, APPL PHYS L, 79(9), 2001, pp. 1348-1350
Citations number
17
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
79
Issue
9
Year of publication
2001
Pages
1348 - 1350
Database
ISI
SICI code
0003-6951(20010827)79:9<1348:MOGEFF>2.0.ZU;2-P
Abstract
High-density silicon nanopillar cathodes were fabricated using a self-assem bling colloidal gold etch mask. Scanning tunneling microscopy experiments w ere performed to locate individual nanopillars and to investigate their fie ld emission properties. Emission characteristics were obtained over a range of fixed separations from the nanopillar apex, allowing the empirical dete rmination of the geometric field enhancement factors from the resulting Fow ler-Nordheim plots. The geometric enhancement factors were found to increas e dramatically for decreasing anode-cathode separation and the rate of incr ease is dependent on the nanopillar geometry. (C) 2001 American Institute o f Physics.