Antiferromagnetic temperature and effective spin in n-type Hg1-xMnxTe

Citation
Ys. Gui et al., Antiferromagnetic temperature and effective spin in n-type Hg1-xMnxTe, APPL PHYS L, 79(9), 2001, pp. 1321-1323
Citations number
20
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
79
Issue
9
Year of publication
2001
Pages
1321 - 1323
Database
ISI
SICI code
0003-6951(20010827)79:9<1321:ATAESI>2.0.ZU;2-J
Abstract
We have observed a characteristic modulation in the amplitude of the Shubni kov-de Haas (SdH) oscillations and a large shift of node position with incr easing temperature in the semimagnetic semiconductor Hg1-xMnxTe. The positi ons of the oscillation extrema are almost temperature independent, with the exception that their phase changes by pi after passing the nodal point. Th ese features can be explained in terms of the exchange interaction between conduction electrons and the localized spin moments of Mn ions. The antifer romagnetic temperature and effective spin have been deduced from the temper ature-dependent node position in the SdH oscillations. (C) 2001 American In stitute of Physics.