Indication of ferromagnetism in molecular-beam-epitaxy-derived N-type GaMnN

Citation
Me. Overberg et al., Indication of ferromagnetism in molecular-beam-epitaxy-derived N-type GaMnN, APPL PHYS L, 79(9), 2001, pp. 1312-1314
Citations number
17
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
79
Issue
9
Year of publication
2001
Pages
1312 - 1314
Database
ISI
SICI code
0003-6951(20010827)79:9<1312:IOFIMN>2.0.ZU;2-2
Abstract
Growth by molecular-beam epitaxy of the dilute magnetic alloy GaMnN is repo rted. The GaMnN contains 7.0% Mn as determined by Auger electron spectrosco py, and is single phase as determined by x-ray diffraction and reflection h igh-energy electron diffraction. Both magnetic and magnetotransport data ar e reported. The results show the anomalous Hall effect, negative magnetores istance, and magnetic hysteresis at 10 K, indicating that Mn is incorporati ng into the GaN and forming the ferromagnetic semiconductor GaMnN. At 25 K the anomalous Hall term vanishes, indicating a Curie temperature between 10 and 25 K. (C) 2001 American Institute of Physics.