We report that a lattice-matched and dislocation-free GaAsyP1-x-yNx/GaP0.98
N0.02 quantum-well (QW) structure can be grown on a Si substrate. A two-dim
ensional growth mode was maintained during growth of all the layers. It was
confirmed that the QW structure was lattice-matched to the Si substrate fr
om the lattice constant measured by x-ray diffraction. A cross-sectional im
age taken by transmission electron microscopy revealed that no threading di
slocations or misfit dislocations were observed at the QW structure. (C) 20
01 American Institute of Physics.