Dislocation-free GaAsyP1-x-yNx/GaP0.98N0.02 quantum-well structure lattice-matched to a Si substrate

Citation
Y. Fujimoto et al., Dislocation-free GaAsyP1-x-yNx/GaP0.98N0.02 quantum-well structure lattice-matched to a Si substrate, APPL PHYS L, 79(9), 2001, pp. 1306-1308
Citations number
11
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
79
Issue
9
Year of publication
2001
Pages
1306 - 1308
Database
ISI
SICI code
0003-6951(20010827)79:9<1306:DGQSL>2.0.ZU;2-1
Abstract
We report that a lattice-matched and dislocation-free GaAsyP1-x-yNx/GaP0.98 N0.02 quantum-well (QW) structure can be grown on a Si substrate. A two-dim ensional growth mode was maintained during growth of all the layers. It was confirmed that the QW structure was lattice-matched to the Si substrate fr om the lattice constant measured by x-ray diffraction. A cross-sectional im age taken by transmission electron microscopy revealed that no threading di slocations or misfit dislocations were observed at the QW structure. (C) 20 01 American Institute of Physics.